LOW-THRESHOLD ALX GA1-X AS VISIBLE AND IR-LIGHT-EMITTING DIODE LASERS

被引：25

作者：

KRESSEL, H

LOCKWOOD, HF

NELSON, H

机构：

来源：

关键词：

D O I：

10.1109/JQE.1970.1076488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：278 / &

共 20 条

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CASEY, HC
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4910 - &
[4] DOBSON CD, 1967, 1ST P INT S GAAS REA, P68
[5] HAYASHI I, 1969, IEEE J QUANTUM ELECT, VQE 5, P211
[6] ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS
HERZOG, AH
GROVES, WO
CRAFORD, MG
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1830 - &
[7] KRESSEL H, 1969, RCA REV, V30, P106
[8] PROPERTIES OF EFFICIENT SILICON-COMPENSATED ALXGA1-XAS ELECTROLUMINESCENT DIODES
KRESSEL, H
HAWRYLO, FZ
ALMELEH, N
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2248 - &
[9] CATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS
KRESSEL, H
MIEROP, H
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) : 5419 - &
[10] STIMULATED EMISSION AT 300 DEGREES K AND SIMULTANEOUS LASING AT 2 WAVELENGTHS IN EPITAXIAL ALXGA1-XAS INJECTION LASERS
KRESSEL, H
HAWRYLO, FZ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1598 - &