STIMULATED EMISSION AT 300 DEGREES K AND SIMULTANEOUS LASING AT 2 WAVELENGTHS IN EPITAXIAL ALXGA1-XAS INJECTION LASERS

被引：7

作者：

KRESSEL, H

HAWRYLO, FZ

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 09期

关键词：

D O I：

10.1109/PROC.1968.6661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1598 / &

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[2] KRESSEL H, 1968, IEEE J QUANTUM ELECT, VQE 4, P176
[3] EFFECT OF IMPURITY DISTRIBUTION ON SIMULTANEOUS LASER ACTION IN GAAS AT 0.84 + 0.88 MU ( ZN SN SI TE DOPANTS TEMPERATURE DEPENDENCE DEPENDS ON DOPING 4.2 DEGREES 27 DEGREES 78 DEGREES K E )
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[4] NELSON H, 1963, RCA REV, V24, P603
[5] EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300 DEGREES K FROM GA1-XALXAS P-N JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY
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PETTIT, GD
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (03) : 81 - +
[6] RUPPRECHT H, 1968, IEEE J QUANTUM ELECT, VQE 4, P35