SILICON EPITAXIAL SOLAR-CELL WITH 663-MV OPEN-CIRCUIT VOLTAGE

被引:24
作者
BLAKERS, AW [1 ]
WERNER, JH [1 ]
BAUSER, E [1 ]
QUEISSER, HJ [1 ]
机构
[1] MAX PLANCK INST FESTKORPERFORSCH, W-7000 STUTTGART 80, GERMANY
关键词
D O I
10.1063/1.106866
中图分类号
O59 [应用物理学];
学科分类号
摘要
Silicon films of 20-mu-m thickness have been grown epitaxially on silicon substrates by liquid-phase epitaxy. Solar cells fabricated on such layers display open-circuit voltages as high as 663 mV (AM1.5, 25-degrees-C), a value which exceeds previous data by a large margin. High open-circuit voltages are a prerequisite for thin-film solar cells with high efficiencies. Our result has applications to both space cells and to low-cost terrestrial cells.
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页码:2752 / 2754
页数:3
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