LARGE DIFFERENCES IN TI THERMAL-DIFFUSION CAUSED DOMAIN INVERSION BETWEEN UNDOPED AND MGO-DOPED LINBO3

被引：2

作者：

XU, CQ

OKAYAMA, H

KAWAHARA, M

机构：

[1] Semiconductor Technology Laboratory, Oki Electric Industry Co. Ltd., Hachioji, Tokyo 193

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 19期

关键词：

D O I：

10.1063/1.111580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The periodic modulation of domain polarizations by Ti thermal diffusion on the + c face of LiNbO3 with and without MgO doping was studied systematically. It was shown that the depth of the inverted domain is quite different for these two substrates. Under the same fabrication conditions, the depth of domain inversion in the MgO-doped substrate is less than one-tenth that of the undoped substrate. This large difference can be explained by the presence of MgO in LiNbO3, which decreases the Ti diffusion constant and increases the minimum Ti concentration required for domain inversion.

引用

页码：2504 / 2506

页数：3

共 14 条

[1] OPTICALLY-INDUCED REFRACTIVE INDEX INHOMOGENEITIES IN LINBO3 AND LITAO3 - (FERROELECTRIC MATERIALS - NONLINEAR OPTICS - E) [J].