TEMPERATURE-DEPENDENCE OF THERMOPHYSICAL PROPERTIES OF GAAS/ALAS PERIODIC STRUCTURE

被引：146

作者：

YU, XY

CHEN, G

VERMA, A

SMITH, JS

机构：

[1] DUKE UNIV, DEPT MECH ENGN & MAT SCI, DURHAM, NC 27708 USA

[2] UNIV CALIF BERKELEY, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 24期

关键词：

D O I：

10.1063/1.114919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work investigates the temperature dependence of CaAs/AlAs thin-film structures. Based on an ac calorimetric method, the thermal diffusivity of a 700 Angstrom/700 Angstrom GaAs/AlAs periodic structure is measured from 190 to 450 K. Thermal conductivity of the structure is derived from the experiment. The results demonstrate that the thermal conductivity/diffusivity of the structure are lower than its corresponding bulk values. The temperature dependence of its thermophysical properties is weaker than that of typical bulk III-V materials. Interface scattering is believed as the major cause of the observed reduction in thermal conductivity. (C) 1995 American Institute of Physics.

引用

页码：3554 / 3556

页数：3

共 11 条

[1]

ADACHI S, 1993, PROPERTIES ALUMINUM

[2] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS [J].