ELECTRONIC STATES IN THE GAP OF AMORPHOUS SILICON-GERMANIUM ALLOYS

被引：6

作者：

STUTZMANN, M ^{[1
]}

TSAI, CC ^{[1
]}

STREET, RA ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90243-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：1011 / 1014

页数：4

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[8] DETAILED INVESTIGATION OF DOPING IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM
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