GROWTH OF IMPROVED QUALITY 3C-SIC FILMS ON 6H-SIC SUBSTRATES

被引：54

作者：

POWELL, JA

LARKIN, DJ

MATUS, LG

CHOYKE, WJ

BRADSHAW, JL

HENDERSON, L

YOGANATHAN, M

YANG, J

PIROUZ, P

机构：

[1] UNIV PITTSBURGH, DEPT PHYS & ASTRON, PITTSBURGH, PA 15260 USA

[2] CASE WESTERN RESERVE UNIV, DEPT MAT SCI & ENGN, CLEVELAND, OH 44106 USA

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 14期

关键词：

D O I：

10.1063/1.102512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Previously reported chemical vapor deposition of 3C-SiC on 6H-SiC has resulted in films with a high density of double positioning boundaries (DPBs). We have found that growth on as-grown faces of 6H-SiC crystals can yield films that are largely free of DPBs. The (111) 3C-SiC films, up to 12 μm thick, were evaluated by optical and electron microscopy and low-temperature photoluminescence (LTPL). The LTPL spectra of the films were similar to those of high quality Lely-grown 3C-SiC.

引用

页码：1353 / 1355

页数：3