HIGH-SPEED, HIGH-CURRENT-GAIN P-N-P INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：28

作者：

LUNARDI, LM

CHANDRASEKHAR, S

HAMM, RA

机构：

[1] AT & T Bell Laboratories., Holmdel, NJ

[2] AT & T Bell Laboratories, Murray Hill, NJ

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 01期

关键词：

D O I：

10.1109/55.215087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

P-n-p InP/InGaAs heterojunction bipolar transistors (HBT's) are reported for the first time. The transistors, grown by metal organic molecular beam epitaxy (MOMBE), exhibited maximum dc current gain values up to 420 for a base doping level of 4 x 10(18) cm-3. Small-signal measurements on self-aligned transistors with 3 x 8-mum2 emitter area indicated the unity gain cutoff frequency value of 10.5 GHz and the inferred maximum frequency of oscillation of 25 GHz. Our results clearly demonstrate the feasibility of complementary integrated circuits in the InP material system.

引用

页码：19 / 21

页数：3

共 7 条

[1] 4 GBIT/S PIN/HBT MONOLITHIC PHOTORECEIVER [J].

CHANDRASEKHAR, S ;

DENTAI, AG ;

JOYNER, CH ;

JOHNSON, BC ;

GNAUCK, AH ;

QUA, GJ .

ELECTRONICS LETTERS, 1990, 26 (22) :1880-1882

[2] A 10GBIT/S OEIC PHOTORECEIVER USING INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

CHANDRASEKHAR, S ;

LUNARDI, LM ;

GNAUCK, AH ;

RITTER, D ;

HAMM, RA ;

PANISH, MB ;

QUA, GJ .

ELECTRONICS LETTERS, 1992, 28 (05) :466-468

[3]

Gray PR., 1984, ANAL DESIGN ANALOG I

[4]

HAMM RA, 1991, UNPUB

[5]

LUNARDI LM, 1992, 50TH ANN DEV RES C

[6]

Montgomery R. K., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P935, DOI 10.1109/IEDM.1991.235272

[7]

WASSERBAUER JG, 1992, APR INP REL COMP C P, P593

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