Heterojunction bipolar transistors have been monolithically integrated with a pin photodetector to realise a high speed transimpedance photoreceiver. The OEIC, made from MOVPE-growth InP/InGaAs heterostructures, had a bandwidth of 2.8 GHz with a transimpedance of 750Ω. It was successfully operated at 4Gbit/s with a sensitivity of-21 dBm at a wavelength of 1.5μm. © 1990, The Institution of Electrical Engineers. All rights reserved.