4 GBIT/S PIN/HBT MONOLITHIC PHOTORECEIVER

被引:27
作者
CHANDRASEKHAR, S
DENTAI, AG
JOYNER, CH
JOHNSON, BC
GNAUCK, AH
QUA, GJ
机构
[1] AT&T Bell Laboratories Crawford Hill Laboratory, New Jersey 07733, Holmdel
关键词
Bipolar devices; Photodetectors; Photoreceivers; Semiconductor devices and materials;
D O I
10.1049/el:19901209
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Heterojunction bipolar transistors have been monolithically integrated with a pin photodetector to realise a high speed transimpedance photoreceiver. The OEIC, made from MOVPE-growth InP/InGaAs heterostructures, had a bandwidth of 2.8 GHz with a transimpedance of 750Ω. It was successfully operated at 4Gbit/s with a sensitivity of-21 dBm at a wavelength of 1.5μm. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:1880 / 1882
页数:3
相关论文
共 4 条
[1]   AN INP INGAAS P-I-N HBT MONOLITHIC TRANSIMPEDANCE PHOTORECEIVER [J].
CHANDRASEKHAR, S ;
JOHNSON, BC ;
BONNEMASON, M ;
TOKUMITSU, E ;
GNAUCK, AH ;
DENTAI, AG ;
JOYNER, CH ;
PERINO, JS ;
QUA, GJ ;
MONBERG, EM .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (07) :505-506
[2]   A 3-GHZ TRANSIMPEDANCE OEIC RECEIVER FOR 1.3-1.55 MU-M FIBEROPTIC SYSTEMS [J].
CHANG, GK ;
HONG, WP ;
GIMLETT, JL ;
BHAT, R ;
NGUYEN, CK ;
SASAKI, G ;
YOUNG, JC .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (03) :197-199
[3]   HIGH-SPEED MONOLITHIC GAINAS PINFET [J].
MIURA, S ;
MIKAWA, T ;
FUJII, T ;
WADA, O .
ELECTRONICS LETTERS, 1988, 24 (07) :394-395
[4]  
Nobuhara H., 1988, Electronics Letters, V24, P1246, DOI 10.1049/el:19880848