AN INP INGAAS P-I-N HBT MONOLITHIC TRANSIMPEDANCE PHOTORECEIVER

被引：22

作者：

CHANDRASEKHAR, S

JOHNSON, BC

BONNEMASON, M

TOKUMITSU, E

GNAUCK, AH

DENTAI, AG

JOYNER, CH

PERINO, JS

QUA, GJ

MONBERG, EM

机构：

[1] INST NATL SCI APPL,F-69621 VILLEURBANNE,FRANCE

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 07期

关键词：

D O I：

10.1109/68.56639

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithically integrated 1 Gb/s p-i-n/HBT transimpedance photoreceiver has been fabricated for the first time. The OEIC was made from MOVPE-grown InP/InGaAs heterostructures and had a transimpedance of 1375 Ω, a sensitivity of -26.1 dBm, >25 dB dynamic range and a 500 MHz bandwidth. © 1990 IEEE

引用

页码：505 / 506

页数：2

共 7 条

[1]

Antreasyan A., 1989, IEEE Photonics Technology Letters, V1, P123, DOI 10.1109/68.36009

[2] SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].