CRYSTALLOGRAPHIC PROPERTIES OF CE(SI,GE)2-X SOLID-SOLUTIONS

被引：2

作者：

BOUTAREK, N

MADAR, R

LAMBERTANDRON, B

AUFFRET, S

PIERRE, J

机构：

[1] LAB CRISTALLOG GRENOBLE,CNRS,F-38042 GRENOBLE,FRANCE

[2] LAB L NEEL,CNRS,F-38042 GRENOBLE,FRANCE

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1992年 / 189卷 / 01期

关键词：

D O I：

10.1016/0925-8388(92)90039-C

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Some crystallographic properties of solid solutions of the Ce-Si-Ge system were investigated. A new type of superstructure was observed in the compound CeGe0.66Si0.92, with an alternation of silicon- or germanium-rich planes; this compound undergoes a crystallographic transition at low temperature. Two different tetragonal phases coexist at room temperature for the compound CeGe1.2Si0.475. These observations are related to phase transformations previously observed in silicides and to the frequent ordering of vacancies in the lattice of rare earth silicides and germanides.

引用

页码：9 / 15

页数：7

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