INPLANE THERMOELECTRIC-POWER OF C-AXIS-ORIENTED SR1-XNDXCUO2-DELTA THIN-FILMS

We measured the in-plane thermoelectric-power coefficients (S) of c-axis-oriented Sr1-xNdxCuO2-delta (0 less-than-or-equal-to x less-than-or-equal-to 0.125) thin films deposited by means of a pulsed-laser deposition technique. The sign of S was negative for all the samples deposited on SrTiO3 substrates and its absolute value decreased with increasing x. The value of S for Sr1-xNdxCuO2-delta with x = 0.125 was demonstrated to be strongly dependent on the substrate material on which the a-axis length depended. On the other hand, the value of S for Sr1-xNdxCuO2-delta with x = 0.05 was found to be rather weakly dependent on the a-axis length. These observations were discussed based on bond-valence-sum calculations. The variance in S of the x = 0.125 sample was attributed to the change in the electronic structure.