SURFACTANT-INDUCED REVERSIBLE CHANGES OF SURFACE-MORPHOLOGY

被引：40

作者：

HORNVONHOEGEN, M

MULLER, BH

ALFALOU, A

HENZLER, M

机构：

[1] Institut für Festkörperphysik, Universität Hannover, 30167 Hannover

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.71.3170

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated the influence of a surfactant on the equilibrium surface morphology in the pseudomorphic regime of heteroepitaxial growth. At 700-degrees-C, 8 monolayers of Ge on Si(001) using Sb as surfactant form strained islands with a size of approximately 300 angstrom, allowing partial elastic relaxation. The surface morphology depends strongly on the Sb coverage and changes from islands with [117] facets at high Sb coverage via round, flat cones with an inclination angle of 12-degrees to islands rotated by 45-degrees with [105] facets formed during growth at low Sb coverage. The equilibrium conditions are verified by the reversible transition from [117] facets to 12-degrees cones initiated by a change of the surfactant coverage.

引用

页码：3170 / 3173

页数：4

共 15 条

[1] STEP STRUCTURE AND DIMER ROW CORRELATIONS IN VICINAL SI(100) [J].