INFORMATION-STORAGE DEVICE USING SURFACE DIODES

被引：1

作者：

KIRKPATRICK, CG ^{[1
]}

POSSIN, GE ^{[1
]}

NORTON, JF ^{[1
]}

机构：

[1] GE,COLL RES & DEV,SCHENECTADY,NY 12301

来源：

关键词：

D O I：

10.1063/1.89248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：592 / 594

页数：3

共 11 条

[1] CREWE AV, 1971, SCI AM, V274, P26
[2] DRUMMOND IW, 1970, 1969 PREM C INT SOUR, P459
[3] ELECTROHYDRODYNAMIC ION-SOURCE FOR MASS-SPECTROMETRY OF LIQUIDS
EVANS, CA
HENDRICKS, CD
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (10) : 1527 - +
[4] FURUKAWA S, 1973, 3RD INT C ION IMPL S, P193
[5] GUILDBERG J, 1971, IEEE T ELECTRON DEVI, V18, P1029
[6] SEMICONDUCTOR NONVOLATILE ELECTRON-BEAM ACCESSED MASS MEMORY
HUGHES, WC
LEMMOND, CQ
PARKS, HG
ELLIS, GW
POSSIN, GE
WILSON, RH
[J]. PROCEEDINGS OF THE IEEE, 1975, 63 (08) : 1230 - 1240
[7] STUDY OF A FIELD-IONIZATION SOURCE FOR MICROPROBE APPLICATIONS
ORLOFF, JH
SWANSON, LW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1209 - 1213
[8] ADVANCES IN MATRIX-LENS TECHNOLOGY
PARKS, HG
HUGHES, WC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1161 - 1164
[9] BIT PACKING DENSITY OF BEAMOS TARGETS
POSSIN, GE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1068 - 1068
[10] POSSIN GE, 1975, 1975 DEV RES C OTT