THE CONTRIBUTION OF SURFACE EFFECTS TO THE SURFACE PHOTOVOLTAGE DEPENDENCE ON TEMPERATURE FOR THE REAL SI(111) SURFACE

被引:2
作者
ADAMOWICZ, B
KOCHOWSKI, S
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D O I
10.1016/0039-6028(88)90517-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:172 / 178
页数:7
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共 11 条
[1]  
ADAMOWICZ B, 1984, 29TH P INT WISS K TH, P41
[2]   Surface Barrier of a Semiconductor as Function of Temperature in the Case of Complex Distributions of States. Calculations and Development. [J].
Bonnet, J. ;
Soonckindt, L. ;
Palau, J.M. ;
Mansour, H. ;
Lassabatere, L. .
Journal de physique Paris, 1984, 45 (07) :1197-1211
[3]   STUDY OF SURFACE PHOTOVOLTAGE OF SILICON [J].
EWING, JR ;
HUNTER, LP .
SOLID-STATE ELECTRONICS, 1975, 18 (7-8) :587-591
[4]   INVESTIGATION OF ENERGETIC SURFACE-STATE DISTRIBUTIONS AT REAL SURFACES OF SILICON AFTER TREATMENT WITH HF AND H2O USING LARGE-SIGNAL PHOTO-VOLTAGE PULSES [J].
HEILIG, K ;
FLIETNER, H ;
REINEKE, J .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (06) :927-940
[5]  
KISELEV VF, 1971, POVERKHNOSTNYJE YAVL, P310
[6]   SURFACE PHOTOVOLTAGE AND INTERNAL PHOTOEMISSION AT ANODIZED INSB SURFACE [J].
LILE, DL .
SURFACE SCIENCE, 1973, 34 (02) :337-367
[7]  
MANY A, 1965, SEMICONDUCTOR SURFAC, P273
[8]  
REED CE, 1975, SURFACE PHYSICS PHOS, P280
[9]  
RZHANOV AV, 1971, ELEKTRONNYYE PROTSES, P96
[10]  
Wolf H.F, 1975, SEMICONDUCTORS