STUDY OF SURFACE PHOTOVOLTAGE OF SILICON

被引：6

作者：

EWING, JR ^{[1
]}

HUNTER, LP ^{[1
]}

机构：

[1] UNIV ROCHESTER,DEPT ELECT ENGN,ROCHESTER,NY 14627

来源：

关键词：

D O I：

10.1016/0038-1101(75)90129-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：587 / 591

页数：5

共 5 条

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[2] LARGE-SIGNAL SURFACE PHOTOVOLTAGE STUDIES WITH GERMANIUM [J].

JOHNSON, EO .

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[3] EFFECT OF OXYGEN ADSORPTION ON SURFACE BARRIER HEIGHT OF CDS [J].

SHAPPIR, J ;

MANY, A .

[4] SURFACE PROPERTIES OF 2-6 COMPOUNDS [J].

SWANK, RK .

PHYSICAL REVIEW, 1967, 153 (03) :844-+

[5] SURFACE PHOTOVOLTAGE MEASUREMENTS IN VAPOUR-DEPOSITED CDS [J].

WAXMAN, A .