BAND OFFSETS, FERMI LEVELS AND IMPURITY BANDS IN DOPED CONTACT LAYERS

被引：2

作者：

BANDARA, KMSV ^{[1
]}

COON, DD ^{[1
]}

机构：

[1] MICROTRON ASSOCIATES,PITTSBURGH,PA 15213

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1988年 / 4卷 / 06期

关键词：

Crystals--Impurities - Semiconductor Devices--Modeling;

D O I：

10.1016/0749-6036(88)90199-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A Hartree-Fock model for impurity bands is used to obtain a simple, approximate correction to the free electron model which is almost universally used in treatments of doped contact layers in quantum well, heterojunction and modulation doped devices. The operation of such devices depends critically on band offsets and Fermi levels. The model incorporates exchange interactions as well as screening and it is analytically solvable. The results are cast in such a form as to facilitate use in modeling the effect of contact layers in the aforesaid devices. Numerical results for shallow dopant band offsets in GaAs are found to be about 10%-25% of the Fermi energy.

引用

页码：705 / 707

页数：3

共 11 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].