DETERMINATION OF THE BAND-EDGE OFFSET IN HETEROJUNCTIONS BY ELECTRON-BEAM INDUCED CURRENT (GAAS/GAALAS)

被引：15

作者：

EISENBEISS, A

HEINRICH, H

OPSCHOOR, J

TIJBURG, RP

PREIER, H

机构：

[1] NEDERLANDSCHE PHILIPS BEDRIJVEN,PHILIPS RES LAB,BEDRIJVEN,NETHERLANDS

[2] FRAUNHOFER INST PHYS MESSTECHN,D-7800 FREIBURG,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 22期

关键词：

D O I：

10.1063/1.97787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1583 / 1585

页数：3

相关论文

共 11 条

[1] ON THE ADJUSTABILITY OF THE ABRUPT HETEROJUNCTION BAND-GAP DISCONTINUITY
BAUER, RS
SANG, HW
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 479 - 504
[2] A CRITICAL-REVIEW OF HETEROJUNCTION BAND OFFSETS
DUGGAN, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1224 - 1230
[3] HEINRICH H, 1986, ADV SOLID STATE PHYS, V26, P251
[4] HELLWEGE KH, 1982, LANDOLTBOERNSTEIN A, V17
[5] HICKMOTT TW, 1986, SPRINGER SERIES SOLI, P72
[6] PENETRATION AND ENERGY-LOSS THEORY OF ELECTRONS IN SOLID TARGETS
KANAYA, K
OKAYAMA, S
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) : 43 - &
[7] BARRIER CONTROL AND MEASUREMENTS - ABRUPT SEMICONDUCTOR HETEROJUNCTIONS
KROEMER, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 433 - 439
[8] BAND OFFSETS AT HETEROINTERFACES - THEORETICAL BASIS, AND REVIEW, OF RECENT EXPERIMENTAL WORK
KROEMER, H
[J]. SURFACE SCIENCE, 1986, 174 (1-3) : 299 - 306
[9] HETEROSTRUCTURE DEVICES - A DEVICE PHYSICIST LOOKS AT INTERFACES
KROEMER, H
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 543 - 576
[10] KROEMER H, 1984, 1983 P NATO ADV STUD, P331