ELECTRICAL PROPERTIES OF TYPE GALLIUM ARSENIDE AT HIGH TEMPERATURES

被引：5

作者：

AKITA, K

IIDA, H

RYUZAN, O

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 03期

关键词：

D O I：

10.1143/JJAP.10.392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：392 / &

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[2] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS
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[5] TEMPERATURE DEPENDENCE OF ENERGY GAP IN GAAS AND GAP
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[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 163 - &