LASER SOLID-PHASE DOPING OF SEMICONDUCTORS

被引：14

作者：

PROKHOROV, AM ^{[1
]}

BONCHIK, AY ^{[1
]}

KIYAK, SG ^{[1
]}

MANENKOV, AA ^{[1
]}

MIKHAILOVA, GN ^{[1
]}

POKHMURSKAJA, AV ^{[1
]}

SEFEROV, AS ^{[1
]}

URSU, I ^{[1
]}

CRACIUN, V ^{[1
]}

MIHAILESCU, IN ^{[1
]}

机构：

[1] CENT INST PHYS,R-76900 BUCHAREST,ROMANIA

来源：

APPLIED SURFACE SCIENCE | 1989年 / 43卷

关键词：

D O I：

10.1016/0169-4332(89)90236-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：340 / 345

页数：6

共 10 条

[1]

ALEKSANDRESCU RA, 1988, DOKL AKAD NAUK SSSR+, V301, P859

[2]

BONCHIK AY, 1989, KRATKIE SOOBSZHENIA, V6, P44

[3]

DVURESCHENSKIJ AV, 1982, PULSE ANNEALING SEMI

[4] OUT-DIFFUSION AND REACTIVATION OF ZN IN INP SUBSTRATES [J].

JUNG, H ;

MARSCHALL, P .

ELECTRONICS LETTERS, 1987, 23 (19) :1010-1011

[5]

KIYAK SG, 1987, KRATKIE SOOBSZHENIA, V3, P10

[6]

KIYAK SG, 1989, FTP, V23, P421

[7]

PROKHOROV AM, 1988, 3RD INT C TEQ88 BUCH, P300

[8]

RUCLMANN I, 1987, PHYS STATUS SOLIDI B, V142, P629

[9]

TITOV VV, 1983, N377411 IV KURCH I A

[10] SOLID-PHASE DOPING OF SILICON WITH BORON BY SURFACE-SCANNING WITH CW CO2-LASER RADIATION [J].

URSU, I ;

CRACIUN, V ;

MIHAILESCU, IN ;

MEDIANU, R ;

POPA, A ;

PROKHOROV, AM ;

KIYAK, SG ;

MANENKOV, AA ;

MIKHAILOVA, GN .

APPLIED PHYSICS LETTERS, 1987, 51 (25) :2109-2111

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