SOLID-PHASE DOPING OF SILICON WITH BORON BY SURFACE-SCANNING WITH CW CO2-LASER RADIATION

被引：7

作者：

URSU, I ^{[1
]}

CRACIUN, V ^{[1
]}

MIHAILESCU, IN ^{[1
]}

MEDIANU, R ^{[1
]}

POPA, A ^{[1
]}

PROKHOROV, AM ^{[1
]}

KIYAK, SG ^{[1
]}

MANENKOV, AA ^{[1
]}

MIKHAILOVA, GN ^{[1
]}

机构：

[1] MOSCOW GEN PHYS INST,MOSCOW,USSR

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 25期

关键词：

D O I：

10.1063/1.98962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2109 / 2111

页数：3

共 19 条

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[3]

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[4]

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[5]

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[6]

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[7]

HILL C, 1987, INSTUM METHODS PHY B, V19, P348

[8]

KIYAK SG, 1987, KRATK SOOBSHCH FIZ, P10

[9] ANNEALING OF IMPLANTED SILICON UNDER THE ACTION OF MICROSECOND PULSED TEA-CO2 LASER-RADIATION [J].

NANU, L ;

BARBULESCU, D ;

MIHAILESCU, IN ;

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NISTOR, LC .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 79 (01) :K5-&

[10]

NANU L, 1983, P SPIE, V398, P398

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