RTP SHALLOW JUNCTION FORMATION OF LOW-ENERGY BORON IMPLANTS INTO PREAMORPHIZED SILICON

被引：7

作者：

BASRA, VK

DOWNEY, DF

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期

关键词：

D O I：

10.1016/0168-583X(87)90891-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：505 / 508

页数：4

共 10 条

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[7]

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[8]

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[9] THE USE OF SELF-IMPLANTED AMORPHIZED SILICON SUBSTRATES TO ELIMINATE CHANNELING EFFECTS IN LOW-ENERGY BORON IMPLANTS [J].

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :490-492

[10] EFFECT OF THE ANNEALING CONDITIONS ON THE ELECTRICAL CHARACTERISTICS OF P+/N SHALLOW JUNCTIONS [J].

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