1-2-KEV BORON IMPLANTS INTO SILICON

被引：16

作者：

DAVIES, DE

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 08期

关键词：

D O I：

10.1109/EDL.1985.26168

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：397 / 399

页数：3

共 12 条

[1]

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[3]

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[4]

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[5] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J].

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IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) :59-62

[6] CHANNELING IN LOW-ENERGY BORON ION-IMPLANTATION [J].

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GARDNER, JA .

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[7] A REVIEW OF RAPID THERMAL ANNEALING (RTA) OF B, BF2 AND AS IONS IMPLANTED INTO SILICON [J].

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JACOBSON, DC .

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[8] SPUTTERING EXPERIMENTS WITH 1- TO 5-KEV AR+ IONS [J].

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[9] SOLID SOLUBILITY AND DIFFUSION COEFFICIENTS OF BORON IN SILICON [J].

VICK, GL ;

WHITTLE, KM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (08) :1142-&

[10] LOW-ENERGY RANGE DISTRIBUTIONS OF B-10 AND B-11 IN AMORPHOUS AND CRYSTALLINE SILICON [J].

WACH, W ;

WITTMAACK, K .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3) :113-116

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