LOW-ENERGY BF-2+ IMPLANTS

被引：4

作者：

BIASSE, B

CARTIER, AM

BRUEL, M

机构：

[1] CEA, Lab d'Electronique et de, Technologie de l'Information,, Grenoble, Fr, CEA, Lab d'Electronique et de Technologie de l'Information, Grenoble, Fr

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 10-1卷 / MAY期

关键词：

D O I：

10.1016/0168-583X(85)90301-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：526 / 528

页数：3

共 10 条

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[7] LOW-ENERGY RANGE DISTRIBUTIONS OF B-10 AND B-11 IN AMORPHOUS AND CRYSTALLINE SILICON [J].

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[8]

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[9] BORON, FLUORINE, AND CARRIER PROFILES FOR B AND BF2 IMPLANTS INTO CRYSTALLINE AND AMORPHOUS SI [J].

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[10]

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