ANNEALING OF IMPLANTED SILICON UNDER THE ACTION OF MICROSECOND PULSED TEA-CO2 LASER-RADIATION

被引：5

作者：

NANU, L

BARBULESCU, D

MIHAILESCU, IN

TEODORESCU, V

NISTOR, LC

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 79卷 / 01期

关键词：

D O I：

10.1002/pssa.2210790140

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K5 / &

共 10 条

[1]

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[3]

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[8]

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[9] THE VAPORIZATION OF A METALLIC TARGET BY A MICROSECOND PULSED TE-CO2 LASER-RADIATION [J].

URSU, I ;

APOSTOL, I ;

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[10] LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J].

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YOUNG, RT .

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