FORMATION OF SHALLOW P+N JUNCTIONS BY DUAL F+/B+ IMPLANTATION

被引：13

作者：

BIASSE, B

CARTIER, AM

SPINELLI, P

BRUEL, M

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期

关键词：

D O I：

10.1016/0168-583X(87)90887-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：493 / 495

页数：3

共 6 条

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[2] ELECTRICAL-PROPERTIES OF SI HEAVILY IMPLANTED WITH BORON MOLECULAR-IONS [J].

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YAEGASHI, Y .

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[3] FORMATION OF SHALLOW P+N JUNCTIONS BY B-ION IMPLANTATION IN SI SUBSTRATES WITH AMORPHOUS LAYERS [J].

ISHIWARA, H ;

HORITA, S .

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[4] NEAR-SURFACE DEFECTS FORMED DURING RAPID THERMAL ANNEALING OF PREAMORPHIZED AND BF2+-IMPLANTED SILICON [J].

SANDS, T ;

WASHBURN, J ;

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MASZARA, W ;

SADANA, DK ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1984, 45 (09) :982-984

[5] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+ [J].

TSAI, MY ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :183-187

[6] DUAL ION-IMPLANTATION TECHNIQUE FOR FORMATION OF SHALLOW P+-N JUNCTIONS IN SILICON [J].

TSAUR, BY ;

ANDERSON, CH .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6336-6339

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