NEAR-SURFACE DEFECTS FORMED DURING RAPID THERMAL ANNEALING OF PREAMORPHIZED AND BF2+-IMPLANTED SILICON

被引：28

作者：

SANDS, T

WASHBURN, J

GRONSKY, R

MASZARA, W

SADANA, DK

ROZGONYI, GA

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650

[2] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650

[3] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

关键词：

D O I：

10.1063/1.95446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：982 / 984

页数：3

共 11 条

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SADANA, DK
ROZGONYI, GA
LIU, J
WORTMAN, J
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 459 - 461
[3] CROWDER BL, 1973, ION IMPLANTATION SEM, P257
[4] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON
LIU, TM
OLDHAM, WG
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 59 - 62
[5] MASZARA W, 1983, NOV P MAT RES SOC EN
[6] MULLER H, 1971, ION IMPLANTATION SEM, P85
[7] SADANA DK, 1983, P I PHYS C SER, V67, P143
[8] SADANA DK, 1977, ELECTRON LETT, V15, P615
[9] SEIDEL TE, 1984, VLSI SCI TECHNOLOGY, V84, P201
[10] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+
TSAI, MY
STREETMAN, BG
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 183 - 187