FORMATION OF SHALLOW P+N JUNCTIONS BY B-ION IMPLANTATION IN SI SUBSTRATES WITH AMORPHOUS LAYERS

被引:12
作者
ISHIWARA, H
HORITA, S
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 05期
关键词
D O I
10.1143/JJAP.24.568
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:568 / 573
页数:6
相关论文
共 20 条
  • [1] RESIDUAL DEFECTS FOLLOWING RAPID THERMAL ANNEALING OF SHALLOW BORON AND BORON FLUORIDE IMPLANTS INTO PREAMORPHIZED SILICON
    CARTER, C
    MASZARA, W
    SADANA, DK
    ROZGONYI, GA
    LIU, J
    WORTMAN, J
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 459 - 461
  • [2] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS
    CHU, WK
    MULLER, H
    MAYER, JW
    SIGMON, TW
    [J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 297 - 299
  • [3] CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER
    GOLD, RB
    GIBBONS, JF
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1256 - 1258
  • [4] LOW-TEMPERATURE ANNEALING OF B AND P IONS INCORPORATED INTO DEPOSITED AND SELF-IMPLANTED AMORPHOUS SI
    ISHIWARA, H
    NARUKE, K
    FURUKAWA, S
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 689 - 693
  • [5] ELECTRICAL ACTIVATION OF B-IONS IMPLANTED IN DEPOSITED-AMORPHOUS SI DURING SOLID-PHASE EPITAXY
    ISHIWARA, H
    NARUKE, K
    FURUKAWA, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L577 - L579
  • [6] SCANNING ELECTRON-BEAM ANNEALING OF P-ION-IMPLANTED SI(100) AND (111) SUBSTRATES
    ISHIWARA, H
    SUZUKI, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (08): : 1065 - 1069
  • [7] THERMAL-BEHAVIOR OF B-ATOMS, P-ATOMS AND AS-ATOMS IN SUPERSATURATED SI PRODUCED BY ION-IMPLANTATION AND PULSED-LASER ANNEALING
    ITOH, K
    SASAKI, Y
    MITSUISHI, T
    MIYAO, M
    TAMURA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (05): : L245 - L247
  • [8] A NEW TUNGSTEN GATE PROCESS FOR VLSI APPLICATIONS
    IWATA, S
    YAMAMOTO, N
    KOBAYASHI, N
    TERADA, T
    MIZUTANI, T
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) : 1174 - 1179
  • [9] CHANNELING IN LOW-ENERGY BORON ION-IMPLANTATION
    MICHEL, AE
    KASTL, RH
    MADER, SR
    MASTERS, BJ
    GARDNER, JA
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 404 - 406
  • [10] MOLINE RA, 1971, ION IMPLANTATION SEM, P58