FORMATION OF SHALLOW P+N JUNCTIONS BY B-ION IMPLANTATION IN SI SUBSTRATES WITH AMORPHOUS LAYERS

被引：12

作者：

ISHIWARA, H

HORITA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 05期

关键词：

D O I：

10.1143/JJAP.24.568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：568 / 573

页数：6

共 20 条

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[2] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS
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[3] CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1256 - 1258
[4] LOW-TEMPERATURE ANNEALING OF B AND P IONS INCORPORATED INTO DEPOSITED AND SELF-IMPLANTED AMORPHOUS SI
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 689 - 693
[5] ELECTRICAL ACTIVATION OF B-IONS IMPLANTED IN DEPOSITED-AMORPHOUS SI DURING SOLID-PHASE EPITAXY
ISHIWARA, H
NARUKE, K
FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L577 - L579
[6] SCANNING ELECTRON-BEAM ANNEALING OF P-ION-IMPLANTED SI(100) AND (111) SUBSTRATES
ISHIWARA, H
SUZUKI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (08): : 1065 - 1069
[7] THERMAL-BEHAVIOR OF B-ATOMS, P-ATOMS AND AS-ATOMS IN SUPERSATURATED SI PRODUCED BY ION-IMPLANTATION AND PULSED-LASER ANNEALING
ITOH, K
SASAKI, Y
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MIYAO, M
TAMURA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (05): : L245 - L247
[8] A NEW TUNGSTEN GATE PROCESS FOR VLSI APPLICATIONS
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KOBAYASHI, N
TERADA, T
MIZUTANI, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) : 1174 - 1179
[9] CHANNELING IN LOW-ENERGY BORON ION-IMPLANTATION
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MASTERS, BJ
GARDNER, JA
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 404 - 406
[10] MOLINE RA, 1971, ION IMPLANTATION SEM, P58

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