A NEW TUNGSTEN GATE PROCESS FOR VLSI APPLICATIONS

被引：59

作者：

IWATA, S ^{[1
]}

YAMAMOTO, N ^{[1
]}

KOBAYASHI, N ^{[1
]}

TERADA, T ^{[1
]}

MIZUTANI, T ^{[1
]}

机构：

[1] HITACHI MICROCOMP ENGN CO LTD,TOKYO 185,JAPAN

来源：

关键词：

D O I：

10.1109/T-ED.1984.21684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1174 / 1179

页数：6

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