MO GATE TETRODE

被引：11

作者：

BROWN, DM

CONNERY, RJ

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1978.19270

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1302 / 1307

页数：6

共 15 条

[1] DOPED OXIDES AS DIFFUSION SOURCES .2. PHOSPHORUS INTO SILICON
BARRY, ML
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1405 - &
[2] SELF-REGISTERED MOLYBDENUM-GATE MOSFET
BROWN, DM
ENGELER, WE
GARFINKEL, M
GRAY, PV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 874 - +
[3] P-CHANNEL REFRACTORY METAL SELF-REGISTERED MOSFET
BROWN, DM
CADY, WR
SPRAGUE, JW
SALVAGNI, PJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 931 - &
[4] BROWN DM, 1972, SOLID STATE TECHNOL, V15, P33
[5] REFRACTORY METAL SILICON DEVICE TECHNOLOGY
BROWN, DM
ENGELER, WE
GARFINKEL, M
GRAY, PV
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1105 - +
[6] BROWN DM, 1971, GE71C308 TECH REP
[7] ENGELER WE, 1971, IEEE T ELECTRON DEV, V18, P54
[8] ARSENIC GLASS SOURCE DIFFUSION IN SI AND SIO2
GHEZZO, M
BROWN, DM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 110 - 116
[9] KONDO M, 1978, FEB IEEE SOL STAT CI, V21, P158
[10] LIN HC, 1975, IEEE T ELECTRON DEV, VED22, P255