SCANNING ELECTRON-BEAM ANNEALING OF P-ION-IMPLANTED SI(100) AND (111) SUBSTRATES

[1] ELECTRICAL ACTIVATION PROCESSES OF P+ IONS CHANNELED ALONG [110] AXIS OF SILICON - EFFECT OF ANNEALING ON CARRIERS PROFILES SHAPE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 26 (03): : 161 - 171

[2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[3] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 604 - 606

[4] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 85 - 87

[5] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1256 - 1258

[8] Ishiwara H., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P437

[9] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J]. ELECTRONICS LETTERS, 1979, 15 (02) : 45 - 47

[10] DAMAGE-DEPENDENT ELECTRICAL ACTIVATION OF ION-IMPLANTED SILICON .1. EXPERIMENTS ON PHOSPHORUS IMPLANTS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 223 - 230

[1] ELECTRICAL ACTIVATION PROCESSES OF P+ IONS CHANNELED ALONG [110] AXIS OF SILICON - EFFECT OF ANNEALING ON CARRIERS PROFILES SHAPE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 26 (03): : 161 - 171

[2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[3] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 604 - 606

[4] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 85 - 87

[5] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1256 - 1258

[8] Ishiwara H., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P437

[9] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J]. ELECTRONICS LETTERS, 1979, 15 (02) : 45 - 47

[10] DAMAGE-DEPENDENT ELECTRICAL ACTIVATION OF ION-IMPLANTED SILICON .1. EXPERIMENTS ON PHOSPHORUS IMPLANTS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 223 - 230