ELECTRICAL ACTIVATION OF B-IONS IMPLANTED IN DEPOSITED-AMORPHOUS SI DURING SOLID-PHASE EPITAXY

被引：3

作者：

ISHIWARA, H

NARUKE, K

FURUKAWA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 09期

关键词：

D O I：

10.1143/JJAP.21.L577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L577 / L579

页数：3

共 9 条

[1]

CROWDER BL, 1973, ION IMPLANTATION SEM, P257

[2] EFFECT OF STRUCTURE AND IMPURITIES ON THE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON [J].

FOTI, G ;

BEAN, JC ;

POATE, JM ;

MAGEE, CW .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :840-842

[3]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[4] SOLID-PHASE LATERAL EPITAXIAL-GROWTH ONTO ADJACENT SIO2 FILM FROM AMORPHOUS-SILICON DEPOSITED ON SINGLE-CRYSTAL SILICON SUBSTRATE [J].

OHMURA, Y ;

MATSUSHITA, Y ;

KASHIWAGI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (03) :L152-L154

[5]

Roth J. A., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P413

[6] SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS [J].

ROTH, JA ;

ANDERSON, CL .

APPLIED PHYSICS LETTERS, 1977, 31 (10) :689-691

[7]

RYSSEL H, 1973, ION IMPLANTATION SEM, P215

[8] GROWTH-CONDITIONS OF DEPOSITED SI FILMS IN SOLID-PHASE EPITAXY [J].

SAITOH, S ;

SUGII, T ;

ISHIWARA, H ;

FURUKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :L130-L132

[9] LASER ANNEALING OF BORON-IMPLANTED SILICON [J].

YOUNG, RT ;

WHITE, CW ;

CLARK, GJ ;

NARAYAN, J ;

CHRISTIE, WH ;

MURAKAMI, M ;

KING, PW ;

KRAMER, SD .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :139-141

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