LOW-TEMPERATURE ANNEALING OF B AND P IONS INCORPORATED INTO DEPOSITED AND SELF-IMPLANTED AMORPHOUS SI

被引：2

作者：

ISHIWARA, H

NARUKE, K

FURUKAWA, S

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90868-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：689 / 693

页数：5

共 10 条

[1] ORIGIN OF NON-GAUSSIAN PROFILES IN PHOSPHORUS-IMPLANTED SILICON
BLOOD, P
DEARNALEY, G
WILKINS, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5123 - 5128
[2] EFFECT OF STRUCTURE AND IMPURITIES ON THE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON
FOTI, G
BEAN, JC
POATE, JM
MAGEE, CW
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 840 - 842
[3] GIBBONS JF, 1975, PROJECTED RANGE STAT
[4] THERMAL-BEHAVIOR OF B-ATOMS, P-ATOMS AND AS-ATOMS IN SUPERSATURATED SI PRODUCED BY ION-IMPLANTATION AND PULSED-LASER ANNEALING
ITOH, K
SASAKI, Y
MITSUISHI, T
MIYAO, M
TAMURA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (05): : L245 - L247
[5] MULLER H, 1971, ION IMPLANTATION SEM, P85
[6] RYSSEL H, 1973, ION IMPLANTATION SEM, P215
[7] GROWTH-CONDITIONS OF DEPOSITED SI FILMS IN SOLID-PHASE EPITAXY
SAITOH, S
SUGII, T
ISHIWARA, H
FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L130 - L132
[8] ANOMALOUS MIGRATION OF FLUORINE AND ELECTRICAL ACTIVATION OF BORON IN BF-2+-IMPLANTED SILICON
TSAI, MY
STREETMAN, BG
WILLIAMS, P
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 144 - 147
[9] LASER ANNEALING OF BORON-IMPLANTED SILICON
YOUNG, RT
WHITE, CW
CLARK, GJ
NARAYAN, J
CHRISTIE, WH
MURAKAMI, M
KING, PW
KRAMER, SD
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 139 - 141
[10] YOUNG RT, 1980, LASER ELECTRON BEAM, P651