THERMAL-BEHAVIOR OF B-ATOMS, P-ATOMS AND AS-ATOMS IN SUPERSATURATED SI PRODUCED BY ION-IMPLANTATION AND PULSED-LASER ANNEALING

被引：15

作者：

ITOH, K ^{[1
]}

SASAKI, Y ^{[1
]}

MITSUISHI, T ^{[1
]}

MIYAO, M ^{[1
]}

TAMURA, M ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 05期

关键词：

D O I：

10.1143/JJAP.21.L245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L245 / L247

页数：3

共 13 条

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[7] FURNACE ANNEALING BEHAVIOR OF PHOSPHORUS IMPLANTED, LASER ANNEALED SILICON [J].

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[8] NON-EQUILIBRIUM SOLID-SOLUTIONS OBTAINED BY HEAVY-ION IMPLANTATION AND LASER ANNEALING [J].

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