SHORT CHANNEL MOS FETS FABRICATED BY SELF-ALIGNED ION-IMPLANTATION AND LASER ANNEALING

被引：7

作者：

MIYAO, M

KOYANAGI, M

TAMURA, H

HASHIMOTO, N

TOKUYAMA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：129 / 132

页数：4

共 10 条

[1]

ALLAN R, 1977, IEEE SPECTRUM DEC, P34

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[3]

LINDGREN N, 1977, IEEE SPECTRUM OCT, P42

[4]

MIYAO M, 1979 P LAS SOL INT L, P325

[5]

Muller J. C., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P711

[6]

NARAYAN J, 1978, P LASER EFFECTS ION, P213

[7]

NATSUAKI N, UNPUBLISHED

[8]

ROZGONI GA, 1978, CHARACTERIZATION TEC, P492

[9]

SEIDEL TE, 1978, CHARACTERIZATION TEC, P518

[10] ANALYTICAL MODELS OF THRESHOLD VOLTAGE AND BREAKDOWN VOLTAGE OF SHORT-CHANNEL MOSFETS DERIVED FROM 2-DIMENSIONAL ANALYSIS [J].

TOYABE, T ;

ASAI, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :375-383

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