FURNACE ANNEALING BEHAVIOR OF PHOSPHORUS IMPLANTED, LASER ANNEALED SILICON

被引：15

作者：

MIYAO, M

ITOH, K

TAMURA, M

TAMURA, H

TOKUYAMA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 08期

关键词：

D O I：

10.1063/1.328233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4139 / 4144

页数：6

共 13 条

[1]

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :129-132

[6] PHOTO-LUMINESCENCE STUDY OF LASER ANNEALING IN PHOSPHORUS-IMPLANTED AND UN-IMPLANTED SILICON [J].

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MIYAO, M .

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[7]

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[8]

REVESZ P, 1978, INT C ION BEAM MODIF, P871

[9]

RIMINI E, 1978, P LASER EFFECTS ION

[10] CARRIER PROFILE CHANGE FOR PHOSPHORUS-DIFFUSED LAYERS ON LOW-TEMPERATURE HEAT TREATMENT [J].

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