CARRIER PROFILE CHANGE FOR PHOSPHORUS-DIFFUSED LAYERS ON LOW-TEMPERATURE HEAT TREATMENT

被引：23

作者：

SCHWETTMANN, FN

KENDALL, DL

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 19卷 / 07期

关键词：

D O I：

10.1063/1.1653892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：218 / +

页数：1

共 11 条

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[8]

Kendall D. L., 1969, Semiconductor silicon, P358

[9] SILICON PHOSPHIDE PRECIPITATES IN DIFFUSED SILICON [J].

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[10] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J].

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