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PRECIPITATES OF PHOSPHORUS AND OF ARSENIC IN SILICON
被引:16
作者
:
JOSHI, ML
论文数:
0
引用数:
0
h-index:
0
JOSHI, ML
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1966年
/ 113卷
/ 01期
关键词
:
D O I
:
10.1149/1.2423860
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:45 / &
相关论文
共 9 条
[1]
BROCK GE, 1962, METALLURGY ADVANCED, V19, P249
[2]
EFFECT OF FAST COOLING ON DIFFUSION-INDUCED IMPERFECTIONS IN SILICON
JOSHI, ML
论文数:
0
引用数:
0
h-index:
0
JOSHI, ML
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(09)
: 912
-
&
[3]
TRANSMISSION ELECTRON MICROSCOPE INVESTIGATIONS ON DIFFUSED SILICON WAFERS WITH RELATION TO ELECTRICAL PROPERTIES OF CONTROLLED RECTIFIERS
KNOPP, AN
论文数:
0
引用数:
0
h-index:
0
KNOPP, AN
STICKLER, R
论文数:
0
引用数:
0
h-index:
0
STICKLER, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(12)
: 1372
-
1376
[4]
FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON
KOOI, E
论文数:
0
引用数:
0
h-index:
0
KOOI, E
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(12)
: 1383
-
1381
[5]
BORON INDUCED DISLOCATIONS IN SILICON
MILLER, DP
论文数:
0
引用数:
0
h-index:
0
MILLER, DP
MOORE, CR
论文数:
0
引用数:
0
h-index:
0
MOORE, CR
MOORE, JE
论文数:
0
引用数:
0
h-index:
0
MOORE, JE
[J].
JOURNAL OF APPLIED PHYSICS,
1962,
33
(08)
: 2648
-
&
[6]
SILICON PHOSPHIDE PRECIPITATES IN DIFFUSED SILICON
SCHMIDT, PF
论文数:
0
引用数:
0
h-index:
0
SCHMIDT, PF
STICKLER, R
论文数:
0
引用数:
0
h-index:
0
STICKLER, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(10)
: 1188
-
1189
[7]
DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON
TANNENBAUM, E
论文数:
0
引用数:
0
h-index:
0
TANNENBAUM, E
[J].
SOLID-STATE ELECTRONICS,
1961,
2
(2-3)
: 123
-
132
[8]
SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON
TRUMBORE, FA
论文数:
0
引用数:
0
h-index:
0
TRUMBORE, FA
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1960,
39
(01):
: 205
-
233
[9]
WAJDA ES, PRIVATE COMMUNICATIO
←
1
→
共 9 条
[1]
BROCK GE, 1962, METALLURGY ADVANCED, V19, P249
[2]
EFFECT OF FAST COOLING ON DIFFUSION-INDUCED IMPERFECTIONS IN SILICON
JOSHI, ML
论文数:
0
引用数:
0
h-index:
0
JOSHI, ML
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(09)
: 912
-
&
[3]
TRANSMISSION ELECTRON MICROSCOPE INVESTIGATIONS ON DIFFUSED SILICON WAFERS WITH RELATION TO ELECTRICAL PROPERTIES OF CONTROLLED RECTIFIERS
KNOPP, AN
论文数:
0
引用数:
0
h-index:
0
KNOPP, AN
STICKLER, R
论文数:
0
引用数:
0
h-index:
0
STICKLER, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(12)
: 1372
-
1376
[4]
FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON
KOOI, E
论文数:
0
引用数:
0
h-index:
0
KOOI, E
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(12)
: 1383
-
1381
[5]
BORON INDUCED DISLOCATIONS IN SILICON
MILLER, DP
论文数:
0
引用数:
0
h-index:
0
MILLER, DP
MOORE, CR
论文数:
0
引用数:
0
h-index:
0
MOORE, CR
MOORE, JE
论文数:
0
引用数:
0
h-index:
0
MOORE, JE
[J].
JOURNAL OF APPLIED PHYSICS,
1962,
33
(08)
: 2648
-
&
[6]
SILICON PHOSPHIDE PRECIPITATES IN DIFFUSED SILICON
SCHMIDT, PF
论文数:
0
引用数:
0
h-index:
0
SCHMIDT, PF
STICKLER, R
论文数:
0
引用数:
0
h-index:
0
STICKLER, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(10)
: 1188
-
1189
[7]
DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON
TANNENBAUM, E
论文数:
0
引用数:
0
h-index:
0
TANNENBAUM, E
[J].
SOLID-STATE ELECTRONICS,
1961,
2
(2-3)
: 123
-
132
[8]
SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON
TRUMBORE, FA
论文数:
0
引用数:
0
h-index:
0
TRUMBORE, FA
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1960,
39
(01):
: 205
-
233
[9]
WAJDA ES, PRIVATE COMMUNICATIO
←
1
→