CRYSTALLOGRAPHY OF SIP AND SIAS SINGLE CRYSTALS AND OF SIP PRECIPITATES IN SI

被引:55
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BECK, CG
STICKLER, R
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10.1063/1.1708117
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O59 [应用物理学];
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页码:4683 / &
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[1]  
BILTZ W, 1938, BER PREUSS AKAD WISS, V100, P99
[2]   METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J].
BOOKER, GR ;
STICKLER, R .
BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09) :446-&
[3]   UBER EIN SILICIUMPHOSPHID SI2P [J].
FRITZ, G ;
BERKENHOFF, HO .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1959, 300 (3-4) :205-209
[4]  
GIESSEN B, 1959, Z METALLKD, V50, P274
[5]  
GLENN R, 1963, RCA SCIENT INSTR NEW, V8, P1
[6]   IMPERFECTIONS IN SILICON INDUCED BY DIFFUSION OF IMPURITIES [J].
INO, H ;
KAWAMURA, T ;
YASUFUKU, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1964, 3 (11) :692-&
[8]   DIFFUSION-INDUCED IMPERFECTIONS IN SILICON [J].
JOSHI, ML ;
WILHELM, F .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) :185-&
[9]   OBSERVATION OF DIFFUSION-INDUCED DISLOCATION LINES IN SILICON THROUGH OPTICAL MICROSCOPY [J].
JOSHI, ML ;
WILHELM, FJ .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) :2593-&
[10]   PRECIPITATES OF PHOSPHORUS AND OF ARSENIC IN SILICON [J].
JOSHI, ML .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (01) :45-&