OBSERVATION OF DIFFUSION-INDUCED DISLOCATION LINES IN SILICON THROUGH OPTICAL MICROSCOPY

被引：13

作者：

JOSHI, ML

WILHELM, FJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 08期

关键词：

D O I：

10.1063/1.1714542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2593 / &

共 10 条

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[6] MICROSCOPY OF INTERNAL CRYSTAL IMPERFECTIONS IN SI P-N JUNCTION DIODES BY USE OF ELECTRON BEAMS [J].

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Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[8] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES [J].

QUEISSER, HJ .

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[9] X-RAY OBSERVATIONS OF DIFFUSION-INDUCED DISLOCATIONS IN SILICON [J].

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[10] DIFFUSION-INDUCED DISLOCATIONS IN SILICON [J].

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