SIMULTANEOUS OBSERVATION OF DIFFUSION-INDUCED DISLOCATION SLIP PATTERNS IN SI WITH ELECTRON BEAM SCANNING + OPTICAL MEANS

被引：33

作者：

CZAJA, W

WHEATLEY, GH

机构：

来源：

关键词：

D O I：

10.1063/1.1713843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2782 / &

共 7 条

[1]

BIRKS LS, 1963, ELECTRON PROBE MICRO

[2]

Castaing R, 1960, ADV ELECTRONICS ELEC, V13, P317, DOI [DOI 10.1016/S0065-2539(08)60212-7, 10.1016/S0065-2539(08)60212-7]

[3]

GROSS AJ, 1956, ACTA MET, V4, P332

LANDER, JJ ;

SCHREIBER, H ;

BUCK, TM ;

MATHEWS, JR .

[5]

Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[6] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES [J].

QUEISSER, HJ .

[7] X-RAY OBSERVATIONS OF DIFFUSION-INDUCED DISLOCATIONS IN SILICON [J].

SCHWUTTKE, GH ;

QUEISSER, HJ .