NON-EQUILIBRIUM SOLID-SOLUTIONS OBTAINED BY HEAVY-ION IMPLANTATION AND LASER ANNEALING

被引:38
作者
NATSUAKI, N
TAMURA, M
TOKUYAMA, T
机构
关键词
D O I
10.1063/1.328050
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3373 / 3382
页数:10
相关论文
共 40 条
[1]  
Appleton B. R., 1970, Atomic collision phenomena in solids, P417
[2]   MONTE CARLO CHANNELING CALCULATIONS [J].
BARRETT, JH .
PHYSICAL REVIEW B, 1971, 3 (05) :1527-&
[3]   STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].
BRODSKY, MH ;
TITLE, RS ;
WEISER, K ;
PETTIT, GD .
PHYSICAL REVIEW B, 1970, 1 (06) :2632-&
[4]  
CAMPISANO SU, 1978, P LASER EFFECTS ION, P139
[5]  
CHIKAWA J, 1978, J JPN ASS CRYST GROW, V5, P141
[7]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[8]   EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON [J].
EROFEEV, VN ;
NIKITENKO, VI ;
OSVENSKII, VB .
PHYSICA STATUS SOLIDI, 1969, 35 (01) :79-+
[9]   EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J].
FAIR, RB ;
WEBER, GR .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :273-279
[10]   SURFACE SCATTERING FROM W-SINGLE CRYSTALS BY MEV HE+ IONS [J].
FELDMAN, LC ;
KAUFFMAN, RL ;
SILVERMAN, PJ ;
ZUHR, RA ;
BARRETT, JH .
PHYSICAL REVIEW LETTERS, 1977, 39 (01) :38-41