INTERFACE DISORDER IN ALAS/(AL)GAAS BRAGG REFLECTORS

被引：46

作者：

ASOM, MT ^{[1
]}

GEVA, M ^{[1
]}

LEIBENGUTH, RE ^{[1
]}

CHU, SNG ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.106421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the structural properties of Bragg reflectors grown by molecular beam epitaxy. The reflectors consist of quarter-wavelength stacks of AlAs/Al(x)Ga(1-x)As. We find a strong dependence of the interface quality on the substrate growth temperature, the Al composition in the ternary alloy, and the presence of impurities in AlAs. We have classified the interface disorder into two categories: interface roughness and structural waviness. We ascribe interface roughness to the segregation of oxygen during AlAs growth. The structural waviness originates from differing surface migration kinetics of Al and Ga which results in phase separation during growth of AlGaAs.

引用

页码：976 / 978

页数：3

共 16 条

[1] STRUCTURE AND STABILITY OF METASTABLE ALPHA-SN [J].