AL-REACTIONS WITH GAAS (100) SURFACES

被引：31

作者：

LANDGREN, G ^{[1
]}

LUDEKE, R ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 37卷 / 02期

关键词：

D O I：

10.1016/0038-1098(81)90727-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：127 / 131

页数：5

共 12 条

[1] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1340-1343

[2] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

BRILLSON, LJ ;

BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

[3] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J].

CHO, AY ;

DERNIER, PD .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3328-3332

[4]

DRAHTEN P, 1978, SURF SCI, V77, pL162

[5] MULTIPLE OXIDATION-STATES OF AL OBSERVED BY PHOTOELECTRON-SPECTROSCOPY OF SUBSTRATE CORE LEVEL SHIFTS [J].

FLODSTROM, SA ;

BACHRACH, RZ ;

BAUER, RS ;

HAGSTROM, SBM .

PHYSICAL REVIEW LETTERS, 1976, 37 (19) :1282-1285

[6] MOLECULAR-BEAM EPITAXY OF ALTERNATING METAL-SEMICONDUCTOR FILMS [J].

LUDEKE, R ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1973, 23 (04) :201-203

[7] ELECTRONIC PROPERTIES OF (100) SURFACES OF GASB AND INAS AND THEIR ALLOYS WITH GAAS [J].

LUDEKE, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (03) :304-314

[8] ELECTRONIC SURFACE STATES ON CLEAN AND OXYGEN-EXPOSED GAAS SURFACES [J].

LUDEKE, R ;

KOMA, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :241-247

[9]

LUDEKE R, 1980, 8TH P INT VAC C CANN

[10] NEW RESULTS IN THE STUDY OF THE ALUMINUM EPITAXIAL-GROWTH ON GALLIUM ARSENIDE(001) [J].

MASSIES, J ;

CHAPLART, J ;

LINH, NT .

SOLID STATE COMMUNICATIONS, 1979, 32 (08) :707-709

← 1 2 →