NEW RESULTS IN THE STUDY OF THE ALUMINUM EPITAXIAL-GROWTH ON GALLIUM ARSENIDE(001)

被引：24

作者：

MASSIES, J

CHAPLART, J

LINH, NT

机构：

[1] Thomson-CSF Central Research Laboratory, 91401 Orsay

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 08期

关键词：

D O I：

10.1016/0038-1098(79)90734-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Epitaxial growth of Al on (001) GaAs obtained by MBE has been studied in a large range of temperature and growth rate. The epitaxial relationship was found to be dependent on these growth parameters. Two types of growth, giving flat and facetted surfaces respectively, were noted to be solely dependent on the growth temperature. © 1979.

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页码：707 / 709

页数：3

相关论文

共 12 条

[1] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

BRILLSON, LJ ;

BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

[2]

CHAPLART J, 1978, THESIS CNAM PARIS

[3] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2074-&

[4] ELECTRONIC AND CRYSTALLOGRAPHIC STRUCTURES OF SILVER ADSORBED ON SILICON (111) [J].

DERRIEN, J ;

LELAY, G ;

SALVAN, F .

JOURNAL DE PHYSIQUE LETTRES, 1978, 39 (16) :L287-L290

[5] MOLECULAR-BEAM SYSTEM CONTROLLED BY QUADRUPOLE MASS-SPECTROMETER [J].

ETIENNE, P ;

MASSIES, J ;

LINH, NT .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (11) :1153-1155

[6] EPITAXIAL-GROWTH OF AG FILMS ON INP(001) BY ATOMIC-BEAM EPITAXY IN ULTRAHIGH-VACUUM [J].

FARROW, RFC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (10) :L135-L138

[7] EPITAXIAL-GROWTH (STRUCTURAL AND TOPOLOGICAL ASPECTS) [J].

KERN, R .

BULLETIN DE MINERALOGIE, 1978, 101 (02) :202-233

[8] EPITAXY OF NOBLE-METALS AND (111) SURFACE SUPERSTRUCTURES OF SILICON AND GERMANIUM .1. STUDY AT ROOM-TEMPERATURE [J].

LELAY, G ;

QUENTEL, G ;

FAURIE, JP ;

MASSON, A .

THIN SOLID FILMS, 1976, 35 (03) :273-287

[9] EPITAXY OF NOBLE-METALS AND (111) SURFACE SUPERSTRUCTURES OF SILICON AND GERMANIUM .2. STUDY AFTER ANNEALING [J].

LELAY, G ;

QUENTEL, G ;

FAURIE, JP ;

MASSON, A .

THIN SOLID FILMS, 1976, 35 (03) :289-303

[10] MOLECULAR-BEAM EPITAXY OF ALTERNATING METAL-SEMICONDUCTOR FILMS [J].

LUDEKE, R ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1973, 23 (04) :201-203