THEORY OF DEEP SUBSTITUTIONAL SP3-BONDED IMPURITY LEVELS AND CORE EXCITONS AT SEMICONDUCTOR INTERFACES

被引：30

作者：

HJALMARSON, HP

ALLEN, RE

BUTTNER, H

DOW, JD

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] SOLAR ENERGY RES INST,PHOTOVOLTA BRANCH,GOLDEN,CO 80401

[3] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[4] TEXAS A&M UNIV,DEPT PHYS,COLLEGE STN,TX 77843

[5] UNIV BAYREUTH,D-8580 BAYREUTH,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.570655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：993 / 996

页数：4

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