GEOMETRICAL SHAPE DEPENDENT POLARIZATION ANISOTROPY IN ELECTROLUMINESCENCE FROM INGAAS/INP QUANTUM WIRES

被引:14
作者
NOTOMI, M
OKAMOTO, M
IWAMURA, H
TAMAMURA, T
机构
[1] NTT Opto-electronics Laboratories, Atsugi, Kanagawa, 243-01
关键词
D O I
10.1063/1.108752
中图分类号
O59 [应用物理学];
学科分类号
摘要
The polarization properties of edge-emitted electroluminescence from InGaAs/InP quantum wires fabricated by reverse-mesa wet etching, electron-beam lithography, and overgrowth, are investigated. Strongly TE polarized electroluminescence from relatively wide wires approaches isotropy as the wires become narrower. The observed dependence on wire size is attributed to a transition from a two-dimensional to a one-dimensional system. The implication is that quantum wires could potentially be applied to polarization-controlled devices, such as polarization insensitive optical amplifiers.
引用
收藏
页码:1094 / 1096
页数:3
相关论文
共 7 条
[1]   MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].
ARAKAWA, Y ;
SAKAKI, H .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941
[2]   SPECTRUM STUDIES ON A GAAS-ALGAAS MULTI-QUANTUM-WELL LASER DIODE GROWN BY MOLECULAR-BEAM EPITAXY [J].
IWAMURA, H ;
SAKU, T ;
KOBAYASHI, H ;
HORIKOSHI, Y .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2692-2695
[3]   DIRECT OBSERVATION OF OPTICAL ANISOTROPY IN A GAAS/ALAS QUANTUM-WELL WIRE ARRAY [J].
KANBE, H ;
CHAVEZPIRSON, A ;
ANDO, H ;
SAITO, H ;
FUKUI, T .
APPLIED PHYSICS LETTERS, 1991, 58 (25) :2969-2971
[4]   POLARIZATION INSENSITIVE TRAVELING-WAVE TYPE AMPLIFIER USING STRAINED MULTIPLE QUANTUM-WELL STRUCTURE [J].
MAGARI, K ;
OKAMOTO, M ;
YASAKA, H ;
SATO, K ;
NOGUCHI, Y ;
MIKAMI, O .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (08) :556-558
[5]   QUANTUM WIRE FABRICATION BY E-BEAM ELITHOGRAPHY USING HIGH-RESOLUTION AND HIGH-SENSITIVITY E-BEAM RESIST ZEP-520 [J].
NISHIDA, T ;
NOTOMI, M ;
IGA, R ;
TAMAMURA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12B) :4508-4514
[6]   CLEAR ENERGY-LEVEL SHIFT IN ULTRANARROW INGAAS/INP QUANTUM-WELL WIRES FABRICATED BY REVERSE MESA CHEMICAL ETCHING [J].
NOTOMI, M ;
NAGANUMA, M ;
NISHIDA, T ;
TAMAMURA, T ;
IWAMURA, H ;
NOJIMA, S ;
OKAMOTO, M .
APPLIED PHYSICS LETTERS, 1991, 58 (07) :720-722
[7]   POLARIZATION DEPENDENT ABSORPTION-SPECTRA IN QUANTUM WIRE STRUCTURES [J].
SUEMUNE, I ;
COLDREN, LA ;
CORZINE, SW .
SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (01) :19-22