FILLING OF MICRON-SIZED CONTACT HOLES WITH COPPER BY ENERGETIC CLUSTER-IMPACT

被引：338

作者：

HABERLAND, H ^{[1
]}

MALL, M ^{[1
]}

MOSELER, M ^{[1
]}

QIANG, Y ^{[1
]}

REINERS, T ^{[1
]}

THURNER, Y ^{[1
]}

机构：

[1] UNIV FREIBURGM, FAK PHYS, D-79104 FREIBURG, GERMANY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1994年 / 12卷 / 05期

关键词：

D O I：

10.1116/1.578967

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A completely ionized and clustered beam of Mo or Cu is deposited with variable kinetic energy on a substrate, and the filling of micron-sized contact holes on semiconductor devices is studied. An excellent hole filling is obtained for the impact of charged copper clusters, if they contain 1000-3000 Cu atoms and impinge with a kinetic energy of about 10 eV per atom on a substrate having a temperature of 500 K. The morphology of small hole fillings by slow and energetic cluster impact is discussed.

引用

页码：2925 / 2930

页数：6

共 15 条

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