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INVERTED ORDER OF ACCEPTOR AND DONOR LEVELS OF MONATOMIC HYDROGEN IN SILICON - REPLY

被引：6
作者：
JOHNSON, NM
HERRING, C
VAN DE WALLE, CG
机构：
来源：
PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.74.4566
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：4566 / 4566
页数：1
相关论文
共 7 条
  • [1] HYDROGEN IN SEMICONDUCTORS - THE ROLES OF MU-SR AND THEORY
    ESTREICHER, SK
    [J]. HYPERFINE INTERACTIONS, 1994, 86 (1-4): : 625 - 637
  • [2] ELECTRON-PARAMAGNETIC RESONANCE OF HYDROGEN IN SILICON
    GORELINSKII, YV
    NEVINNYI, NN
    [J]. PHYSICA B, 1991, 170 (1-4): : 155 - 167
  • [3] INVERTED ORDER OF ACCEPTOR AND DONOR LEVELS OF MONATOMIC HYDROGEN IN SILICON
    JOHNSON, NM
    HERRING, C
    VAN DE WALLE, CG
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (01) : 130 - 133
  • [4] DIFFUSION OF NEGATIVELY CHARGED HYDROGEN IN SILICON
    JOHNSON, NM
    HERRING, C
    [J]. PHYSICAL REVIEW B, 1992, 46 (23): : 15554 - 15557
  • [5] JOHNSON NM, 1994, MATER SCI FORUM, V143-, P867, DOI 10.4028/www.scientific.net/MSF.143-147.867
  • [6] DISTINCT QUANTUM BEHAVIOR OF HYDROGEN AND MUONIUM IN CRYSTALLINE SILICON
    RAMIREZ, R
    HERRERO, CP
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (01) : 126 - 129
  • [7] INVERTED ORDER OF ACCEPTOR AND DONOR LEVELS OF MONATOMIC HYDROGEN IN SILICON - COMMENT
    SEAGER, CH
    ANDERSON, RA
    ESTREICHER, SK
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (22) : 4565 - 4565
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