NEW INSTABILITY IN MOLECULAR-BEAM EPITAXY

被引：79

作者：

DUPORT, C ^{[1
]}

NOZIERES, P ^{[1
]}

VILLAIN, J ^{[1
]}

机构：

[1] INST MAX VON LAUE PAUL LANGEVIN,F-38042 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.74.134

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new, step bunching instability in the growth of stepped surfaces by molecular beam epitaxy MBE is described. It is produced by an elastic mechanism, and is different from the instability discovered by Asaro and Tiller and by Grinfeld. Unlike the Asaro-Tiller-Grinfeld instability (which is expected to occur only under very low fluxes), the present instability can occur or not, according to the nature of the substrate. This instability is likely to be offset by step barrier asymmetry in many materials. © 1994 The American Physical Society.

引用

页码：134 / 137

页数：4

共 17 条

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